Notes on BJT & FET Transistors.
Comments.
The name transistor comes from the phrase �transferring an electrical signal across a resistor.�
In this course we will discuss two types of transistors:�
The Bipolar Junction Transistor (BJT) is an active device.� In simple terms, it is a current controlled valve.� The base current �(IB) controls the collectorcurrent (IC).�
The Field Effect Transistor (FET) is an active device.� In simple terms, it is a voltage controlled valve.� The gate-source voltage �(VGS) controls the draincurrent (ID).�
Regions of BJT operation:
Cut-off region:� The transistor is off. There is no conduction between the collector and the emitter.� (IB = 0 therefore IC = 0)
Active region:� The transistor is on. The collector current is proportional to and controlled by the base current (IC = βIB) and relatively insensitive to VCE.� In this region the transistor can be an amplifier.
Saturation region:� The transistor is on. The collector current varies very little with a change in the base current in the saturation region.� The VCE is small, a few tenths of volt.� The collector current is strongly dependent on VCE unlike in the active region.� It is desirable to operate transistor switches in or near the saturation region when in their on state.
Rules for Bipolar Junction Transistors (BJTs):
- For an npn transistor, the voltage at the collector VC must be greater than the voltage at the emitter VE by at least a few tenths of a volt; otherwise, current will not flow through the collector-emitter junction, no matter what the applied voltage at the base.� For pnp transistors, the emitter voltage must be greater than the collector voltage by a similar amount.
- For the npn transistor, there is a voltage drop from the base to the emitter of 0.6 V.� For a pnp transistor, there is also a 0.6 V rise from the base to the emitter.� In terms of operation, this means that the base voltage VB of an npn transistor must be at least 0.6 V greater that the emitter voltage VE; otherwise, the transistor will not pass emitter-to-collector current.� For a pnp transistor, VB must be at least 0.6 V less than VE; otherwise, it will not pass collector-to-emitter current.
BASIC EQUATIONS FOR THE BJT.�
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